The parameters of CMOS device D1 are: VOHmax=3.84V, VOLmax=0.33V, VIHmax=1.8V, VILmax=0.9V, IOH(max)=-4mA,IOL(max)=4mA, IIH=1uA, IIL=-1uA. The parameters of CMOS device D2 are: VOHmax=2.8V, VOLmax=0.4V, VIHmax=2.0V, VILmax=0.8V, IOL(max)=8mA, IOH(max)=-40
分类:慕课