题目内容：
以下抑制自掺杂的方法不正确的是（）
A.采用背封技术，如生长二氧化硅或者多晶硅
B.采用低温外延技术
C.采用含卤原子的硅源
D.外延生长前高温加热沉底，表面形成耗尽层
参考答案：
选择题：以下抑制自掺杂的方法不正确的是（）
- 题目分类：中国大学MOOC慕课
- 题目类型：选择题
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